Growth-induced electron mobility enhancement at the LaAlO/SrTiO interface
arXiv:1503.05906 · doi:10.1063/1.4907676
Abstract
We have studied the electronic properties of the 2D electron liquid present at the LaAlO/SrTiO interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650°C exhibit the highest low temperature mobility () and the lowest sheet carrier density (). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800-900°C) display carrier densities in the range of and mobilities of at 4K. Reducing their carrier density by field effect to lowers their mobilites to bringing the conductance to the weak-localization regime.
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Cited by in corpus (14)
- Physics of SrTiO-based heterostructures and nanostructures: a review
- Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface
- Dual-Gate Modulation of Carrier Density and Disorder in an Oxide Two-Dimensional Electron System
- Oxide 2D electron gases as a route for high carrier densities on (001) Si
- Universality of Electron Mobility in LaAlO/SrTiO and bulk SrTiO
- Probing Quantum Confinement and Electronic Structure at Polar Oxide Interfaces
- Nature of electrons from oxygen vacancies and polar catastrophe at LaAlO3/SrTiO3 interfaces
- Enhancement of electron mobility at oxide interfaces induced by WO3 overlayers
- Electron Pairing and Nematicity in LaAlO/SrTiO Nanostructures
- Conducting LaAlO3/SrTiO3 heterointerfaces on atomically flat substrates prepared by deionized-water
- Hard x-ray angle-resolved photoemission from a buried high-mobility electron system
- Growth-Temperature Dependence of Conductivity at the LaCrO/SrTiO (001) Interface
- A Laser-ARPES View of the 2D Electron Systems at LaAlO3/SrTiO3 and Al/SrTiO3 Interfaces
- Local inhomogeneities resolved by scanning probe techniques and their impact on local 2DEG formation in oxide heterostructures