A Laser-ARPES View of the 2D Electron Systems at LaAlO3/SrTiO3 and Al/SrTiO3 Interfaces

Abstract

We have measured the electronic structure of the two-dimensional electron system (2DES) found at the Al/SrTiO3 (Al/STO) and LaAlO3/SrTiO3 (LAO/STO) interfaces by means of laser angle resolved photoemission spectroscopy, taking advantage of the large photoelectron escape depth at low photon energy to probe these buried interfaces. We demonstrate the possibility of tuning the electronic density in Al/STO by varying the Al layer thickness and show that the electronic structure evolution is well described by self-consistent tight binding supercell calculations, but differs qualitatively from a rigid band shift model. We show that both 2DES are strongly coupled to longitudinal optical phonons, in agreement with previous reports of a polaronic ground state in similar STO based 2DESs. Tuning the electronic density in Al/STO to match that of LAO/STO and comparing both systems, we estimate that the intrinsic LAO/STO 2DES has a bare band width of ~ 60 meV and a carrier density of ~ 6 10^13 cm-2.

This is the submitted version of the manuscript. Accepted for publication in Advanced Electronic Materials

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Cited by in corpus (3)

• Anisotropic Electronic Structure of the Two-Dimensional Electron Gas at the AlOx/KTaO3(110) interface
• High stability 2D electron gases formed in Si3N4/Al//KTaO3 heterostructures: synthesis and in-depth interfacial characterization
• Duality and degeneracy lifting in two-dimensional electron liquids on SrTiO${}_3$(001)