Controlling the electronic interface properties of AlO${}_x$/SrTiO${}_3$ heterostructures

Abstract

Depositing disordered Al on top of SrTiO${}_3$ is a cheap and easy way to create a two-dimensional electron system in the SrTiO${}_3$ surface layers. To facilitate future device applications we passivate the heterostructure by a disordered LaAlO${}_3$ capping layer to study the electronic properties by complementary x-ray photoemission spectroscopy and transport measurements on the very same samples. We also tune the electronic interface properties by adjusting the oxygen pressure during film growth.

arXiv comment9 pages, 5 figures

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Cited by in corpus (4)

• Metal/SrTiO${}_3$ two-dimensional electron gases for spin-to-charge conversion
• Anisotropic Electronic Structure of the Two-Dimensional Electron Gas at the AlOx/KTaO3(110) interface
• A Laser-ARPES View of the 2D Electron Systems at LaAlO3/SrTiO3 and Al/SrTiO3 Interfaces
• High stability 2D electron gases formed in Si3N4/Al//KTaO3 heterostructures: synthesis and in-depth interfacial characterization