activity
20132022
most citedTailoring Materials for Mottronics: Excess Oxygen Doping of a Prototypical Mott Insulator

65 citations · 179 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mtrl-sci2022★ 9 cited

Toward Functionalized Ultrathin Oxide Films: the Impact of Surface Apical Oxygen

Judith Gabel, Matthias Pickem, Philipp Scheiderer +12

Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commo…

cond-mat.str-el2021★ 6 cited

Hard x-ray angle-resolved photoemission from a buried high-mobility electron system

Michael Zapf, Matthias Schmitt, Judith Gabel +18

Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properti…

cond-mat.mtrl-sci2021★ 5 cited

Hard X-ray photoemission spectroscopy of LaVO/SrTiO: Band alignment and electronic reconstruction

M. Stübinger, J. Gabel, P. Scheiderer +13

The heterostructure consisting of the Mott insulator LaVO and the band insulator SrTiO is considered a promising candidate for future photovoltaic applications. Not only do…

cond-mat.mtrl-sci2021★ 12 cited

Controlling the electronic interface properties of AlO/SrTiO heterostructures

Berengar Leikert, Judith Gabel, Matthias Schmitt +6

Depositing disordered Al on top of SrTiO is a cheap and easy way to create a two-dimensional electron system in the SrTiO surface layers. To facilitate future device applic…

cond-mat.mtrl-sci2018★ 65 cited

Tailoring Materials for Mottronics: Excess Oxygen Doping of a Prototypical Mott Insulator

Philipp Scheiderer, Matthias Schmitt, Judith Gabel +7

The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons.…

cond-mat.str-el2017★ 44 cited

Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopy

P. Schütz, D. V. Christensen, V. Borisov +15

The spinel/perovskite heterointerface -AlO/SrTiO hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counte…

cond-mat.mes-hall2016★ 8 cited

Gate-tunable, normally-on to normally-off memristance transition in patterned LaAlO3/SrTiO3 interfaces

Patrick Maier, Fabian Hartmann, Judith Gabel +8

We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gat…

cond-mat.str-el2013★ 30 cited

Bulk Nature of Layered Perovskite Iridates beyond the Mott Scenario : An Approach from Bulk Sensitive Photoemission Study

A. Yamasaki, S. Tachibana, H. Fujiwara +24

We present genuine bulk Ir 5d jeff states of layered perovskite iridates obtained by hard-x-ray photoemission spectroscopy (HAXPES) with s- and p-polarized lights. HAXPES spectra o…