Creation of high mobility two-dimensional electron gases via strain induced polarization at an otherwise nonpolar complex oxide interface

Abstract

The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise nonpolar perovskite-type interface of CaZrO3/SrTiO3. Remarkably, this heterointerface is atomically sharp, and exhibits a high electron mobility exceeding 60,000 cm2V-1s-1 at low temperatures. The 2DEG carrier density exhibits a critical dependence on the film thickness, in good agreement with the polarization induced 2DEG scheme.

19 pages, 4 figs; Nano Letters,2015, published online

References in corpus (4)

• Magnetic effects at the interface between nonmagnetic oxides
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• A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3
• Electronic reconstruction at the isopolar LaTiO3/LaFeO3 interface: An x-ray photoemission and density functional theory study

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• Extremely low energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/GaAlAs heterostructures