350 citations · 1.2k across the 22 of their papers we have counts for
22 papers
Band-Order Anomaly at the γ-Al2O3/SrTiO3 Interface Drives the Electron-Mobility Boost
Alla Chikina, Dennis V. Christensen, Vladislav Borisov +10
Rich functionalities of transition-metal oxides and their interfaces bear an enormous technological potential. Its realization in practical devices requires, however, a significant…
Gate-tunable Rashba spin-orbit coupling and spin polarization at diluted oxide interfaces
Yulin Gan, Yu Zhang, Dennis V. Christensen +2
Diluted oxide interface of LaAl1-xMnxO/SrTiO3 (LAMO/STO) provides a new way of tuning the ground states of the interface between the two band insulators of LAO and STO from metalli…
On the emergence of conductivity at SrTiO3-based oxide interfaces -- an in-situ study
Merlin von Soosten, Dennis Valbjørn Christensen, Chang-Beom Eom +3
Heterostructures and crystal interfaces play a major role in state-of-the-art semiconductor devices and play a central role in the field of oxide electronics. In oxides the link be…
Towards Photoferroic Materials by Design: Recent Progresses and Perspective
Ivano E. Castelli, Thomas Olsen, Yunzhong Chen
The use of photoferroic materials that combine ferroelectric and light harvesting properties in a photovoltaic device is a promising route to significantly improve the efficiency o…
Magnetic and electronic properties at the gamma-Al2O3/SrTiO3 interface
J. R. L. Mardegan, D. V. Christensen, Y. Z. Chen +7
The magnetic and electronic nature of the gamma-Al2O3/SrTiO3 spinel/perovskite interface is explored by means of x-ray absorption spectroscopy. Polarized x-ray techniques combined…
Diluted Oxide Interfaces with Tunable Ground States
Yulin Gan, Dennis Valbjørn Christensen, Yu Zhang +14
The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of mu…
Direct demonstration of the emergent magnetism resulting from the multivalence Mn in a LaMnO3 epitaxial thin film system
Wei Niu, Wenqing Liu, Min Gu +14
Atomically engineered oxide heterostructures provide a fertile ground for creating novel states. For example, a two-dimensional electron gas at the interface between two oxide insu…
Tuning the two-dimensional electron liquid at oxide interfaces by buffer-layer-engineered redox reactions
Y. Z. Chen, R. J. Green, R. Sutarto +4
Polar discontinuities and redox reactions provide alternative paths to create two-dimensional electron liquids (2DELs) at oxide interfaces. Herein, we report high mobility 2DELs at…
Giant tunability of the two-dimensional electron gas at the interface of gamma-Al2O3/SrTiO3
W. Niu, Y. Zhang, Y. L. Gan +9
Herein, we reported giant tunability of the physical properties of 2DEGs at the spinel/perovskite interface of γ-Al2O3/SrTiO3 (GAO/STO). By modulating the carrier density thus the…
Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopy
P. Schütz, D. V. Christensen, V. Borisov +15
The spinel/perovskite heterointerface -AlO/SrTiO hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counte…
Universality of Electron Mobility in LaAlO/SrTiO and bulk SrTiO
F. Trier, K. V. Reich, D. V. Christensen +5
Metallic LaAlO/SrTiO (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, , is poorly un…
Effect of Sr-doping of LaMnO3 spacer on modulation-doped two-dimensional electron gases at oxide interfaces
Y. Z. Chen, Y. L. Gan, D. V. Christensen +2
Modulation-doped oxide two-dimensional electron gas (2DEG) formed at the LaMnO3 (LMO) buffered disorderd-LaAlO3/SrTiO3 (d-LAO/LMO/STO) heterointerface, provides new opportunities f…
Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO
Felix Trier, Guenevere E. D. K. Prawiroatmodjo, Zhicheng Zhong +7
The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of…
Patterning of high mobility electron gases at complex oxide interfaces
Felix Trier, Guenevere E. D. K. Prawiroatmodjo, Merlin von Soosten +4
Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxid…
Infrared ellipsometry study of the confined electrons in a high-mobility -AlO/SrTiO heterostructure
Meghdad Yazdi-Rizi, Premysl Marsik, Benjamin Mallett +5
With infrared ellipsometry we studied the response of the confined electrons in a -AlO/SrTiO heterostructures in which they originate predominantly from oxygen vacan…
Evidence of weak superconductivity at the room-temperature grown LaAlO/SrTiO interface
Guenevere E. D. K. Prawiroatmodjo, Felix Trier, Dennis V. Christensen +3
The two-dimensional electron gas at the crystalline LaAlO/SrTiO (c-LAO/STO) interface has sparked large interest due to its exotic properties including an intriguing ga…
Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation doping
Y. Z. Chen, F. Trier, T. Wijnands +22
The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO…
Creation of high mobility two-dimensional electron gases via strain induced polarization at an otherwise nonpolar complex oxide interface
Yunzhong Chen, Felix Trier, Takeshi Kasama +10
The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG…
Visible light enhanced field effect at LaAlO3/SrTiO3 interface
Y. Lei, Y. Z. Chen, Y. W. Xie +8
Electrical field and light-illumination have been two most widely used stimuli in tuning the conductivity of semiconductor devices. Via capacitive effect electrical field modifies…
Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces
Y. Z. Chen, N. Bovet, T. Kasama +5
Well-controlled sub-unit-cell layer-by-layer epitaxial growth of spinel alumina is achieved at room temperature on the TiO2-terminated SrTiO3 single crystalline substrate. By tailo…
High-Mobility Two-Dimensional Electron Gases at Oxide Interfaces: Origins and Opportunities
Y. Z. Chen, N. Pryds, J. R. Sun +2
The discovery of two-dimensional electron gas (2DEG) at well-defined interfaces between insulating complex oxides provides the opportunity for a new generation of all-oxide electro…
Metallic and insulating interfaces of amorphous SrTiO3-based oxide heterostructures
Yunzhong Chen, Nini Pryds, Josee E. Kleibeuker +6
The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. Herein we show that m…