Patterning of high mobility electron gases at complex oxide interfaces

Abstract

Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains underexplored and inhibits the study of quantum mechanical effects where extended electron mean free paths are paramount. This letter presents an effective patterning strategy of both the amorphous-LaAlO${}_3$/SrTiO${}_3$ (a-LAO/STO) and modulation-doped amorphous- LaAlO${}_3$/La${}_{7/8}$Sr${}_{1/8}$MnO${}_3$/SrTiO${}_3$ (a-LAO/LSM/STO) oxide interfaces. Our patterning is based on selective wet etching of amorphous-LSM (a-LSM) thin films which acts as a hard mask during subsequent depositions. Strikingly, the patterned modulation-doped interface shows electron mobilities up to ~8,700 cm${}^2$/Vs at 2 K, which is among the highest reported values for patterned conducting complex oxide interfaces that usually are ~1,000 cm${}^2$/Vs at 2 K.

References in corpus (3)

• Magnetic effects at the interface between nonmagnetic oxides
• Electric Field Control of the LaAlO${}_3$/SrTiO${}_3$ Interface Ground State
• A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3

Cited by in corpus (5)

• Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO${}_3$
• Giant tunability of the two-dimensional electron gas at the interface of gamma-Al2O3/SrTiO3
• Gate-tunable Rashba spin-orbit coupling and spin polarization at diluted oxide interfaces
• Suppressed carrier density for the patterned high mobility two-dimensional electron gas at gamma-Al2O3/SrTiO3 heterointerfaces
• High-quality Nano-patterning of Oxide Interfaces Using Transferred Gold Mask