Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO
arXiv:1603.02850 · doi:10.1103/PhysRevLett.117.096804
Abstract
The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO3 heterointerface based on the modulation-doped amorphous-LaAlO/SrTiO heterostructure, which exhibits both high electron mobility exceeding 10000 cm/Vs and low carrier density on the order of ~10 cm. Along with unambiguous Shubnikov-de Haas oscillations, the spacing of the quantized Hall resistance suggests that the interface is comprised of a single quantum well with ten parallel conducting two-dimensional subbands. This provides new insight into the electronic structure of conducting oxide interfaces and represents an important step towards designing and understanding advanced oxide devices.
References in corpus (8)
- Magnetic effects at the interface between nonmagnetic oxides
- Electric Field Control of the LaAlO/SrTiO Interface Ground State
- A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3
- Giant Oscillating Thermopower at Oxide Interfaces
- Large modulation of the Shubnikov-de Haas oscillations by the Rashba interaction at the LaAlO/SrTiO interface
- Quantum longitudinal and Hall transport at the LaAlO3/SrTiO3 interface at low electron densities
- Accumulation, inversion, and depletion layers in SrTiO
- Patterning of high mobility electron gases at complex oxide interfaces
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- Giant tunability of the two-dimensional electron gas at the interface of gamma-Al2O3/SrTiO3
- Tuning up or down the critical thickness in LaAlO3/SrTiO3 through in situ deposition of metal overlayers
- Tuning the two-dimensional electron liquid at oxide interfaces by buffer-layer-engineered redox reactions
- Gate-tunable Rashba spin-orbit coupling and spin polarization at diluted oxide interfaces
- Aperiodic quantum oscillations in the two-dimensional electron gas at the LaAlO3/SrTiO3 interface
- Symmetry and correlation effects on band structure explain the anomalous transport properties of (111) LaAlO/SrTiO
- Suppressed carrier density for the patterned high mobility two-dimensional electron gas at gamma-Al2O3/SrTiO3 heterointerfaces
- Two-dimensional electron systems in ATiO3 perovskites (A = Ca, Ba, Sr): control of orbital hybridization and order
- From low-field Sondheimer oscillations to high-field very large and linear magnetoresistance in a SrTiO-based two-dimensional electron gas
- Correlation between Superconductivity, Band Filling and Electron Confinement at the LaAlO-SrTiO Interface
- Symmetry breaking and fermionic fractional Chern insulator in topologically trivial bands
- Universality of Electron Mobility in LaAlO/SrTiO and bulk SrTiO
- Ionic modulation at the LaAlO/KTaO interface for extreme high-mobility two-dimensional electron gas
- Effect of Sr-doping of LaMnO3 spacer on modulation-doped two-dimensional electron gases at oxide interfaces
- Quantum oscillations in 2D electron gases with spin-orbit and Zeeman interactions
- Unconventional quantum oscillations and evidence of nonparabolic electronic states in quasi-two-dimensional electron system at complex oxide interfaces
- Magnetotransport of a 2DEG with anisotropic Rashba interaction at the LaAlO/SrTiO interface
- Electron Accumulation Layer in Ultrastrong Magnetic Field
- Ferromagnetic Two-dimensional Electron Gases with Magnetic Doping and Proximity Effects
- Electrostatic gate-controlled quantum interference in a high-mobility two-dimensional electron gas at the (LaSr)(AlTa)O/SrTiO interface
- Lithography-free patterning of SrTiO-based two-dimensional electron gases using direct atomic layer processing