498 citations · 3.4k across the 31 of their papers we have counts for
33 papers
Negative charging energy in LaAlO/SrTiO quantum dots induced by SrTiO polarization
J. Czarnecki, A. Sierant, B. Szafran +12
We propose a microscopic mechanism for the negative charging energy in LaAlO/SrTiO quantum dots, arising from the electrostatic image charge associated with the paraelectri…
InAs/MoRe hybrid semiconductor/superconductor nanowire devices
Bilal Kousar, Damon J. Carrad, Lukas Stampfer +3
Implementing superconductors capable of proximity-inducing a large energy-gap in semiconductors in the presence of strong magnetic fields is a major goal towards applications of se…
Photon assisted tunneling of high order multiple Andreev reflections in epitaxial nanowire Josephson junctions
Damon J. Carrad, Lukas Stampfer, Dags Olsteins +4
Semiconductor/superconductor hybrids exhibit a range of phenomena that can be exploited for the study of novel physics and the development of new technologies. Understanding the or…
Superconductivity and parity preservation in as-grown In islands on InAs nanowires
Martin Saurbrey Bjergfelt, Damon J. Carrad, Thomas Kanne +4
We report in-situ synthesis of crystalline indium islands on InAs nanowires grown by molecular beam epitaxy. Structural analysis by transmission electron microscopy showed that In…
Andreev interference in the surface accumulation layer of half-shell InAsSb/Al hybrid nanowires
Lukas Stampfer, Damon J. Carrad, Dags Olsteins +4
Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments base…
Doubling the mobility of InAs/InGaAs selective area grown nanowires
Daria V. Beznasyuk, Sara Martí-Sánchez, Jung-Hyun Kang +12
Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potenti…