Correlation between Superconductivity, Band Filling and Electron Confinement at the LaAlO-SrTiO Interface
arXiv:1801.02881 · doi:10.1103/PhysRevB.97.245113
Abstract
By combined top- and backgating, we explore the correlation of superconductivity with band filling and electron confinement at the LaAlO-SrTiO interface. We find that the top- and backgate voltages have distinctly different effects on the superconducting critical temperature, implying that the confining potential well has a profound effect on superconductivity. We investigate the origin of this behavior by comparing the gate-dependence of to the corresponding evolution of the band filling with gate voltage. For several backgate voltages, we observe maximum to consistently coincide with a kink in tuning the band filling for high topgate voltage. Self-consistent Schrödinger-Poisson calculations relate this kink to a Lifshitz transition of the second subband. These results establish a major role for confinement-induced subbands in the phase diagram of SrTiO surface states, and establish gating as a means to control the relative energy of these states.
17 pages, 5 figures
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Cited by in corpus (8)
- Electronic phase separation: recent progress in the old problem
- New insights into the electron trapping mechanism in LaAlO_3 / SrTiO3 heterostructures
- Tuning Rashba spin-orbit coupling at LaAlO3/SrTiO3 interfaces by band filling
- Competing superconducting phases in interacting two-dimensional electron gas with strong Rashba spin-orbit coupling
- Possible Flexoelectric Origin of the Lifshitz Transition in LaAlO/SrTiO Interfaces
- Artificial quantum confinement in LAO3/STO heterostructure
- Evolution of domain structure with electron doping in ferroelectric thin films
- Understanding the onset of negative electronic compressibility in one- and two-band 2D electron gases: Application to LaAlO/SrTiO