activity
20162019
most cited periodic Andreev bound states in a Dirac semimetal

104 citations · 221 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2019

Magnetoresistance from time-reversal symmetry breaking in topological materials

J. C. de Boer, D. P. Leusink, A. Brinkman

Magnetotransport measurements are a popular way of characterizing the electronic structure of topological materials and often the resulting datasets cannot be described by the well…

cond-mat.mes-hall2019★ 14 cited

Origin of the butterfly magnetoresistance in ZrSiS

J. A. Voerman, L. Mulder, J. C. de Boer +4

ZrSiS has been identified as a topological material made from non-toxic and earth-abundant elements. Together with its extremely large and uniquely angle-dependent magnetoresistanc…

cond-mat.mes-hall2018★ 26 cited

Zeeman effect induced 0- transitions in ballistic Dirac semimetal Josephson junctions

Chuan Li, Bob de Ronde, Jorrit de Boer +5

One of the consequences of Cooper pairs having a finite momentum in the interlayer of a Josephson junction, is -junction behavior. The finite momentum can either be due to an ex…

cond-mat.mtrl-sci2018★ 17 cited

Correlation between Superconductivity, Band Filling and Electron Confinement at the LaAlO-SrTiO Interface

A. E. M. Smink, M. P. Stehno, J. C. de Boer +3

By combined top- and backgating, we explore the correlation of superconductivity with band filling and electron confinement at the LaAlO-SrTiO interface. We find that the t…

cond-mat.supr-con2017★ 104 cited

periodic Andreev bound states in a Dirac semimetal

Chuan Li, Jorrit C. de Boer, Bob de Ronde +7

Electrons in a Dirac semimetals possess linear dispersion in all three spatial dimensions, and form part of a developing platform of novel quantum materials. BiSb suppo…

cond-mat.str-el2016★ 60 cited

Gate-tunable band structure of the LaAlO-SrTiO interface

A. E. M. Smink, J. C. de Boer, M. P. Stehno +3

The 2-dimensional electron system at the interface between LaAlO and SrTiO has several unique properties that can be tuned by an externally applied gate voltage. In thi…