paper

Quantum confinement in perovskite oxide heterostructures: tight binding instead of nearly free electron picture

arXiv:1308.2615 · doi:10.1103/PhysRevB.88.125401

Abstract

Most recently, orbital-selective quantum well states of electrons have been experimentally observed in SrVO ultrathin films [K. Yoshimatsu et. al., Science 333, 319 (2011)] and SrTiO surfaces [A. F. Santander-Syro et. al., Nature 469, 189 (2011)]. Hitherto, one tries to explain these experiments by a nearly free electron (NFE) model, an approach widely used for delocalized electrons in semiconductor heterostructures and simple metal films. We show that a tight binding (TB) model is more suitable for describing heterostructures with more localized electrons. In this paper, we construct from first principles simple TB models for perovskite oxide heterostructures and surfaces. We show that the TB model provides a simple intuitive physical picture and yields, already with only two parameters, quantitatively much more reliable results, consistent with experiment.

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