Electronics with correlated oxides: SrVO${}_3$/SrTiO${}_3$ as a Mott transistor

Abstract

We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO${}_3$ on a SrTiO${}_3$ substrate are insulating: the thin film geometry lifts the orbital degeneracy which in turn triggers a Mott-Hubbard transition. Two layers of SrVO${}_3$ are just at the verge of a Mott-Hubbard transition and hence ideally suited for technological applications of the Mott-Hubbard transition: the heterostructure is highly sensitive to strain, electric field, and temperature. A gate voltage can also turn the insulator into a metal, so that a transistor with ideal on-off (metal-insulator) switching properties is realized.

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• Dynamical Mean-Field Theory of Strongly Correlated Electron Systems
• Extended regime of coexisting metallic and insulating phases in a two-orbital electronic system
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• Bandwidth Control and Symmetry Breaking in a Mott-Hubbard Correlated Metal
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• Real-space dynamical mean-field theory of Friedel oscillations in strongly correlated electron systems
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• Pitfalls and solutions for perovskite transparent conductors
• Multilayer engineering of CaVO${}_3$ thin films with SrTiO${}_3$ and LaAlO${}_3$ from DFT+DMFT
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• Doping asymmetry and layer-selective metal-insulator transition in trilayer K${}_{3+x}$C${}_{60}$
• The impact of the near-surface region on the interpretation of x-ray absorption spectroscopy
• Self-energy self-consistent density functional theory plus dynamical mean field theory
• Oxide Heterostructures from a Realistic Many-Body Perspective
• Mixed-configuration approximation for multiorbital systems out of equilibrium
• Quantified Degeneracy, Entropy and Metal-Insulator Transition in Complex Transition-Metal Oxides
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