Zoology of spin and orbital fluctuations in ultrathin oxide films
arXiv:2201.07058 · doi:10.1103/PhysRevB.104.024307
Abstract
Many metallic transition-metal oxides turn insulating when grown as films that are only a few unit-cells thick. The microscopic origins of these thickness induced metal-to-insulator transitions however remain under dispute. Here, we simulate the extreme case of a monolayer of an inconspicuous correlated metal -- the strontium vanadate SrVO -- deposited on a SrTiO substrate. Crucially, our system can have a termination to vacuum consisting of either a SrO or a VO top layer. While we find that both lead to Mott insulating behavior at nominal stoichiometry, the phase diagram emerging upon doping -- chemically or through an applied gate voltage -- is qualitatively different. Indeed, our many-body calculations reveal a cornucopia of nonlocal fluctuations associated with (in)commensurate antiferromagnetic, ferromagnetic, as well as stripe and checkerboard orbital ordering instabilities. Identifying that the two geometries yield crystal-field splittings of opposite signs, we elucidate the ensuing phases through the lens of the orbital degrees of freedom. Quite generally, our work highlights that interface and surface reconstruction and the deformation or severing of coordination polyhedra in ultra-thin films drive rich properties that are radically different from the material's bulk physics.
10 pages, 8 figures
References in corpus (16)
- Continuous-time Monte Carlo methods for quantum impurity models
- Orbital effects in solids: basics, recent progress and opportunities
- Fate of the false Mott-Hubbard transition in two dimensions
- Tracking the Footprints of Spin Fluctuations: A MultiMethod, MultiMessenger Study of the Two-Dimensional Hubbard Model
- The 2021 Quantum Materials Roadmap
- Enhanced Crystal Field Splitting and Orbital Selective Coherence by Strong Correlations in V_2O_3
- Ab initio dynamical vertex approximation
- Effect of Crystal-Field Splitting and Inter-Band Hybridization on the Metal-Insulator Transitions of Strongly Correlated Systems
- Correlations in a band insulator
- A route to room temperature ferromagnetic ultrathin SrRuO films
- Efficient lattice dynamics calculations for correlated materials with DFT+DMFT
- Spin-Orbital Order Modified by Orbital Dilution in Transition Metal Oxides: From Spin Defects to Frustrated Spins Polarizing Host Orbitals
- Electric double-layer transistor using layered iron selenide Mott insulator TlFe1.6Se2
- Cubic interaction parameters for t2g Wannier orbitals
- Isoelectronic tuning of heavy fermion systems: Proposal to synthesize Ce3Sb4Pd3
- Anisotropy of electronic correlations: On the applicability of local theories to layered materials
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- Second-order phase transitions and divergent linear response in dynamical mean-field theory
- Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2O3 Films