Strain Engineering of the Intrinsic Spin Hall Conductivity in a SrTiO${}_3$ Quantum Well

Abstract

The intrinsic spin Hall conductivity of a two-dimensional gas confined to SrTiO${}_3$, such as occurs at an LaAlO${}_3$/SrTiO${}_3$ interface, is calculated from the Kubo formula. The effect of strain in the [001] (normal to the quantum well direction) and the [111] direction is incorporated into a full tight-binding Hamiltonian. We show that the spin-charge conversion ratio can be significantly altered through strain and gate voltage by tuning the chemical potential. Strain direction is also a significant factor in the spin Hall response as this direction affects the alignment of the conduction bands.

9 pages, 6 figures

References in corpus (11)

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• Theory of the spin galvanic effect at oxide interfaces
• Topological states at the (001) surface of SrTiO3

Cited by in corpus (3)

• Oxide spin-orbitronics: spin-charge interconversion and topological spin textures
• Twist-induced magnon Landau levels in honeycomb magnets
• Spin texture driven spintronic enhancement at the LaAlO${}_3$/SrTiO${}_3$ interface