Theory of the spin galvanic effect at oxide interfaces
arXiv:1706.07243 · doi:10.1103/PhysRevLett.119.256801
Abstract
The spin galvanic effect (SGE) describes the conversion of a non-equilibrium spin polarization into a transverse charge current. Recent experiments have demonstrated a large conversion efficiency for the two-dimensional electron gas formed at the interface between two insulating oxides, LaAlO and SrTiO. Here we analyze the SGE for oxide interfaces within a three-band model for the Ti t orbitals which displays an interesting variety of effective spin-orbit couplings in the individual bands that contribute differently to the spin-charge conversion. Our analytical approach is supplemented by a numerical treatment where we also investigate the influence of disorder and temperature, which turns out to be crucial to provide an appropriate description of the experimental data.
arXiv comment5 pages, 3 figures
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- Photogalvanic Effect in Silicene
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- Interface controlled Berry phase and anisotropic spin-charge conversion in altermagnet-topological insulator bilayers
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