Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces

Abstract

Well-controlled sub-unit-cell layer-by-layer epitaxial growth of spinel alumina is achieved at room temperature on the TiO2-terminated SrTiO3 single crystalline substrate. By tailoring the interface redox reaction, two-dimensional electron gases with mobilities exceeding 3000 cm2V-1s-1 are achieved at this novel oxide interface.

Adv. Mater. published on-line

References in corpus (2)

• Magnetic effects at the interface between nonmagnetic oxides
• A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3

Cited by in corpus (11)

• Creation of high mobility two-dimensional electron gases via strain induced polarization at an otherwise nonpolar complex oxide interface
• Giant tunability of the two-dimensional electron gas at the interface of gamma-Al2O3/SrTiO3
• Evidence of weak superconductivity at the room-temperature grown LaAlO${}_3$/SrTiO${}_3$ interface
• Anomalous orbital structure in a spinel-perovskite interface $\gamma$-Al${}_2$O${}_3$/SrTiO${}_3$
• Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopy
• A Metal-Insulator Transition of the Buried MnO2 Monolayer in Complex Oxide Heterostructure
• Suppressed carrier density for the patterned high mobility two-dimensional electron gas at gamma-Al2O3/SrTiO3 heterointerfaces
• Patterning of high mobility electron gases at complex oxide interfaces
• Ferroelectric control of spin-polarized two-dimensional electron gas
• High-mobility two-dimensional electron gas in $\gamma$-Al${}_2$O${}_3$/SrTiO${}_3$ heterostructures
• Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces via charge transfer induced modulation doping