344 citations · 663 across the 10 of their papers we have counts for
12 papers
Band-Order Anomaly at the γ-Al2O3/SrTiO3 Interface Drives the Electron-Mobility Boost
Alla Chikina, Dennis V. Christensen, Vladislav Borisov +10
Rich functionalities of transition-metal oxides and their interfaces bear an enormous technological potential. Its realization in practical devices requires, however, a significant…
Self-formed Micro-Membranes
Alessia Sambri, Mario Scuderi, Anita Guarino +13
Oxide heterostructures represent a unique playground for triggering the emergence of novel electronic states and for implementing new device concepts. The discovery of 2D conductiv…
Gate-tunable Rashba spin-orbit coupling and spin polarization at diluted oxide interfaces
Yulin Gan, Yu Zhang, Dennis V. Christensen +2
Diluted oxide interface of LaAl1-xMnxO/SrTiO3 (LAMO/STO) provides a new way of tuning the ground states of the interface between the two band insulators of LAO and STO from metalli…
On the emergence of conductivity at SrTiO3-based oxide interfaces -- an in-situ study
Merlin von Soosten, Dennis Valbjørn Christensen, Chang-Beom Eom +3
Heterostructures and crystal interfaces play a major role in state-of-the-art semiconductor devices and play a central role in the field of oxide electronics. In oxides the link be…
Magnetic and electronic properties at the gamma-Al2O3/SrTiO3 interface
J. R. L. Mardegan, D. V. Christensen, Y. Z. Chen +7
The magnetic and electronic nature of the gamma-Al2O3/SrTiO3 spinel/perovskite interface is explored by means of x-ray absorption spectroscopy. Polarized x-ray techniques combined…
Diluted Oxide Interfaces with Tunable Ground States
Yulin Gan, Dennis Valbjørn Christensen, Yu Zhang +14
The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of mu…