Visible light enhanced field effect at LaAlO3/SrTiO3 interface
arXiv:1405.6250 · doi:10.1038/ncomms6554
Abstract
Electrical field and light-illumination have been two most widely used stimuli in tuning the conductivity of semiconductor devices. Via capacitive effect electrical field modifies the carrier density of the devices, while light-illumination generates extra carriers by exciting trapped electrons into conduction band1. Here, we report on an unexpected light illumination enhanced field effect in a quasi-two-dimensional electron gas (q2DEG) confined at the LaAlO3/SrTiO3 (LAO/STO) interface which has been the focus of emergent phenomenon exploration2-14. We found that light illumination greatly accelerates and amplifies the field effect, driving the field-induced resistance growth which originally lasts for thousands of seconds into an abrupt resistance jump more than two orders of magnitude. Also, the field-induced change in carrier density is much larger than that expected from the capacitive effect, and can even be opposite to the conventional photoelectric effect. This work expands the space for novel effect exploration and multifunctional device design at complex oxide interfaces.
References in corpus (14)
- Magnetic effects at the interface between nonmagnetic oxides
- Electric Field Control of the LaAlO/SrTiO Interface Ground State
- Tunable Rashba spin-orbit interaction at oxide interfaces
- The role of oxygen vacancies in SrTiO3 at the LaAlO3/SrTiO3 interface
- Strain gradient induced polarization in SrTiO3 single crystals
- Creation and control of a two-dimensional electron liquid at the bare SrTiO3 surface
- Metallic and insulating interfaces of amorphous SrTiO3-based oxide heterostructures
- Dominant mobility modulation by the electric field effect at the LaAlO_3 / SrTiO_3 interface
- Two-dimensional quantum oscillations of the conductance at LaAlO3/SrTiO3 interfaces
- Control of electronic conduction at an oxide heterointerface using surface polar adsorbates
- Carrier freeze-out induced metal-insulator transition in oxygen deficient SrTiO3 films
- Charge writing at the LaAlO3/SrTiO3 surface
- Hopping and clustering of oxygen vacancies in SrTiO3 by anelastic relaxation
- Static and Ultrafast Dynamics of Defects of SrTiO3 in LaAlO3/SrTiO3 Heterostructures
Cited by in corpus (12)
- Observation of Inverse Edelstein Effect in Rashba-Split 2DEG between SrTiO3 and LaAlO3 at Room Temperature
- Giant tunability of the two-dimensional electron gas at the interface of gamma-Al2O3/SrTiO3
- New insights into the electron trapping mechanism in LaAlO_3 / SrTiO3 heterostructures
- Tuning the two-dimensional electron liquid at oxide interfaces by buffer-layer-engineered redox reactions
- Evolution of the SrTiO surface electronic state as a function of LaAlO overlayer thickness
- Suppressed carrier density for the patterned high mobility two-dimensional electron gas at gamma-Al2O3/SrTiO3 heterointerfaces
- Electron trapping and detrapping in an oxide two-dimensional electron gas: The role of ferroelastic twin walls
- Dynamic Modulation of the Transport Properties of the LaAlO3/SrTiO3 Interface Using Uniaxial Strain
- Tuning the superconducting transition of SrTiO-based 2DEGs with light
- Electric field control of photoinduced effect in LaSrMnO/LaTiO/SrTiO heterostructure
- Effect of Sr-doping of LaMnO3 spacer on modulation-doped two-dimensional electron gases at oxide interfaces
- Coupling between tilts and charge carriers at polar-nonpolar perovskite interfaces