Electric field control of photoinduced effect in LaSrMnO/LaTiO/SrTiO heterostructure
arXiv:1908.08295 · doi:10.1103/PhysRevB.100.115119
Abstract
In this work we have studied the effect of light and electric field on the electrical properties of La0.7Sr0.3MnO3 (LSMO) film at 300 K. Taking advantage of it's charge, spin, orbital and lattice degrees of freedom, we have successfully shown that light and electric field together can be used to tune the resistance states of the manganite system. Using applied gate voltage (Vg) and light we were able to obtain a change in resistance of about +/-7.5%. Furthermore, incorporating an ultra thin interfacial LaTiO3 (LTO) layer provides valuable insight on the origin of the photoinduced effect. The observed photoinduced effect is attributed to photoexcited down spin eg electrons, interfacial charge injection and manipulation of orbital occupancy depending on the gate voltage and wavelength of light.
References in corpus (5)
- Critical thickness and orbital ordering in ultrathin La0.7Sr0.3MnO3 films
- Electrical manipulation of orbital occupancy and magnetic anisotropy in manganites
- Visible light enhanced field effect at LaAlO3/SrTiO3 interface
- Novel photo-conducting state and its perturbation by electrostatic fields in oxide-based two-dimensional electron gas
- Enhanced persistent photoconductivity in -doped LaAlO/SrTiO heterostructures