Hopping and clustering of oxygen vacancies in SrTiO3 by anelastic relaxation

Abstract

The complex elastic compliance s11(w,T) of SrTiO3-d has been measured as a function of the O deficiency d < 0.01. The two main relaxation peaks in the absorption are identified with hopping of isolated O vacancies over a barrier of 0.60 eV and reorientation of pairs of vacancies involving a barrier of 1 eV. The pair binding energy is ~0.2 eV and indications for additional clustering, possibly into chains, is found already at d ~0.004. The anistropic component of the elastic dipole of an O vacancy is Deltalambda = 0.026.

4 pages, 4 figures, submitted to Phys. Rev. Lett

References in corpus (1)

• Formation and mobility of oxygen vacancies in RuSr2GdCu2O8

Cited by in corpus (6)

• Visible light enhanced field effect at LaAlO3/SrTiO3 interface
• Charged Defects and Phonon Hall Effects in Ionic Crystals
• Probing ferroelectricity in highly conducting materials through their elastic response: persistence of ferroelectricity in metallic BaTiO3-d
• Oxygen-vacancy clustering and pseudogap behaviour at LaAlO3/SrTiO3 interface
• Gate voltage control of the $Al{O}_x$/$SrTi{O}_3$ interface electrical properties
• Elastic aging from coexistence and transformations of ferroelectric and antiferroelectric states in PZT