103 citations · 293 across the 8 of their papers we have counts for
10 papers · 1 filter
Band-Order Anomaly at the γ-Al2O3/SrTiO3 Interface Drives the Electron-Mobility Boost
Alla Chikina, Dennis V. Christensen, Vladislav Borisov +10
Rich functionalities of transition-metal oxides and their interfaces bear an enormous technological potential. Its realization in practical devices requires, however, a significant…
On the emergence of conductivity at SrTiO3-based oxide interfaces -- an in-situ study
Merlin von Soosten, Dennis Valbjørn Christensen, Chang-Beom Eom +3
Heterostructures and crystal interfaces play a major role in state-of-the-art semiconductor devices and play a central role in the field of oxide electronics. In oxides the link be…
Towards Photoferroic Materials by Design: Recent Progresses and Perspective
Ivano E. Castelli, Thomas Olsen, Yunzhong Chen
The use of photoferroic materials that combine ferroelectric and light harvesting properties in a photovoltaic device is a promising route to significantly improve the efficiency o…
Diluted Oxide Interfaces with Tunable Ground States
Yulin Gan, Dennis Valbjørn Christensen, Yu Zhang +14
The metallic interface between two oxide insulators, such as LaAlO3/SrTiO3 (LAO/STO), provides new opportunities for electronics and spintronics. However, due to the presence of mu…
Direct demonstration of the emergent magnetism resulting from the multivalence Mn in a LaMnO3 epitaxial thin film system
Wei Niu, Wenqing Liu, Min Gu +14
Atomically engineered oxide heterostructures provide a fertile ground for creating novel states. For example, a two-dimensional electron gas at the interface between two oxide insu…
Tuning the two-dimensional electron liquid at oxide interfaces by buffer-layer-engineered redox reactions
Y. Z. Chen, R. J. Green, R. Sutarto +4
Polar discontinuities and redox reactions provide alternative paths to create two-dimensional electron liquids (2DELs) at oxide interfaces. Herein, we report high mobility 2DELs at…