The Conducting Channel at the LaAlO/SrTiO Interface
arXiv:1308.4755 · doi:10.1103/PhysRevB.88.161107
Abstract
Localization of electrons in the two-dimensional electron gas at the LaAlO/SrTiO interface is investigated by varying the channel thickness in order to establish the nature of the conducting channel. Layers of SrTiO were grown on NdGaO (110) substrates and capped with LaAlO. When the SrTiO thickness is unit cells, most electrons at the interface are localized, but when the number of SrTiO layers is 8-16, the free carrier density approaches cm, the value corresponding to charge transfer of 0.5 electron per unit cell at the interface. The number of delocalized electrons decreases again when the SrTiO thickness is unit cells. The nm conducting channel is therefore located significantly below the interface. The results are explained in terms of Anderson localization and the position of the mobility edge with respect to the Fermi level.
Main: 19 pages, 4 figures Supplementary: 14 pages, 10 figures
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Cited by in corpus (5)
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- Controlling Kondo-like Scattering at the SrTiO3-based Interfaces
- Bandgap Controlling of the Oxygen-Vacancy-Induced Two-Dimensional Electron Gas in SrTiO3
- High field magneto-transport in two-dimensional electron gas LaAlO3/SrTiO3
- Two-dimensional electron systems in perovskite oxide heterostructures: Role of the polarity-induced substitutional defects