Nanoscale Electrostatic Control of Oxide Interfaces

Abstract

We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO${}_3$/SrTiO${}_3$ as a model system, we demonstrate controllable electrostatic confinement of electrons to nanoscale regions in the conducting interface. The excellent gate response, ultra-low leakage currents, and long term stability of these gates allow us to perform a variety of studies in different device geometries from room temperature down to 50 mK. Using a split-gate device we demonstrate the formation of a narrow conducting channel whose width can be controllably reduced via the application of appropriate gate voltages. We also show that a single narrow gate can be used to induce locally a superconducting to insulating transition. Furthermore, in the superconducting regime we see indications of a gate-voltage controlled Josephson effect.

Version after peer review; includes additional data on superconductivity

References in corpus (4)

• Magnetic effects at the interface between nonmagnetic oxides
• Electric Field Control of the LaAlO${}_3$/SrTiO${}_3$ Interface Ground State
• A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3
• Magnetic and Superconducting Ordering at LaAlO3/SrTiO3 Interfaces

Cited by in corpus (1)

• Magneto-transport study of top- and back-gated LaAlO${}_3$/SrTiO${}_3$ heterostructures