Electrical transport across Au/Nb:SrTiO3 Schottky interface with different Nb doping

Abstract

We have investigated electron transport in Nb doped SrTiO${}_3$ single crystals for two doping densities. We find that the resistivity and mobility are temperature dependent in both whereas the carrier concentration is almost temperature invariant. We rationalize this using the hydrogenic theory for shallow donors. Further, we probe electrical transport across Schottky interfaces of Au on TiO${}_2$ terminated n-type SrTiO${}_3$. Quantitative analysis of macroscopic I-V measurements reveal thermionic emission dominated transport for the low doped substrate whereas it deviates from such behavior for the high doped substrate. This work is relevant for designing devices to study electronic transport using oxide-semiconductors.

10 Pages, 3 Figures

References in corpus (4)

• Magnetic effects at the interface between nonmagnetic oxides
• High Mobility in LaAlO3/SrTiO3 Heterostructures: Origin, Dimensionality and Perspectives
• High-quality all-oxide Schottky junctions fabricated on heavily Nb-doped SrTiO3 substrates
• Temperature Dependent Polarity Reversal in Au/Nb:SrTiO3 Schottky Junctions

Cited by in corpus (1)

• Probing electron transport across a LSMO/Nb:STO heterointerface at the nanoscale