High-quality all-oxide Schottky junctions fabricated on heavily Nb-doped SrTiO3 substrates

Abstract

We present a detailed investigation of the electrical properties of epitaxial La0.7Sr0.3MnO3/SrTi0.98Nb0.02O3 Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconductors, high-quality oxide-based Schottky junctions maintain a highly rectifying behavior for doping concentration of the semiconductor larger than 10^20 cm^(-3). Moreover, the junctions show hysteretic current-voltage characteristics.

10 pages, 9 figures

Cited by in corpus (6)

• Electrical transport across Au/Nb:SrTiO3 Schottky interface with different Nb doping
• Unification of bulk and interface electroresistive switching in oxide systems
• Probing electron transport across a LSMO/Nb:STO heterointerface at the nanoscale
• Insulating-to-Conducting Behavior and Band Profile Across the La0.9Ba0.1MnO3/Nb:SrTiO3 Epitaxial Interface
• Point contact investigations of film and interface magnetoresistance of La${}_{0.7}$Sr${}_{0.3}$MnO${}_3$ heterostructures on Nb:SrTiO${}_3$
• Novel Photovoltaic Phenomenon in Manganite/ZnO Heterostructure