59 citations · 82 across the 2 of their papers we have counts for
3 papers
cond-mat.str-el2008★ 23 cited
Unification of bulk and interface electroresistive switching in oxide systems
A. Ruotolo, C. W. Leung, C. Y. Lam +3
We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by th…
cond-mat.str-el2007★ 59 cited
High-quality all-oxide Schottky junctions fabricated on heavily Nb-doped SrTiO3 substrates
A. Ruotolo, C. Y. Lam, W. F. Cheng +2
We present a detailed investigation of the electrical properties of epitaxial La0.7Sr0.3MnO3/SrTi0.98Nb0.02O3 Schottky junctions. A fabrication process that allows reduction of the…
cond-mat.str-el2004
Controlling the exchange interaction using the spin-flip transition of antiferromagnetic spins in NiFe / -FeO
Joonghoe Dho, C. W. Leung, Z. H. Barber +1
We report studies of exchange bias and coercivity in ferromagnetic NiFe layers coupled to antiferromagnetic (AF) (0001), (110), and (112) -Fe…