Unification of bulk and interface electroresistive switching in oxide systems
arXiv:0805.3159 · doi:10.1103/PhysRevB.77.233103
Abstract
We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region.
4 pages, 3 figures, accepted in PRB