59 citations · 82 across the 2 of their papers we have counts for
2 papers
cond-mat.str-el2008★ 23 cited
Unification of bulk and interface electroresistive switching in oxide systems
A. Ruotolo, C. W. Leung, C. Y. Lam +3
We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by th…
cond-mat.str-el2007★ 59 cited
High-quality all-oxide Schottky junctions fabricated on heavily Nb-doped SrTiO3 substrates
A. Ruotolo, C. Y. Lam, W. F. Cheng +2
We present a detailed investigation of the electrical properties of epitaxial La0.7Sr0.3MnO3/SrTi0.98Nb0.02O3 Schottky junctions. A fabrication process that allows reduction of the…