Low temperature metallic state induced by electrostatic carrier doping of SrTiO${}_3$

Abstract

Transport properties of SrTiO${}_3$-channel field-effect transistors with parylene organic gate insulator have been investigated. By applying gate voltage, the sheet resistance falls below $R_{\square }$ $\sim$ 10 k$\Omega$ at low temperatures, with carrier mobility exceeding 1000 cm${}^2$/Vs. The temperature dependence of the sheet resistance taken under constant gate voltage exhibits metallic behavior ($dR$/$dT$ $>$ 0). Our results demonstrate an insulator to metal transition in SrTiO${}_3$ driven by electrostatic carrier density control.

3 pages, 4 figures

References in corpus (2)

• Metal-insulator transition in two-dimensional electron systems
• Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator

Cited by in corpus (4)

• High Mobility in LaAlO3/SrTiO3 Heterostructures: Origin, Dimensionality and Perspectives
• Coherent and Incoherent States of Electron-doped SrTiO3
• Temperature Dependent Polarity Reversal in Au/Nb:SrTiO3 Schottky Junctions
• Optically tuned dimensionality crossover in photocarrier-doped SrTiO${}_3$: onset of weak localization