Electric field thermopower modulation analysis of an interfacial conducting layer formed between Y2O3 and rutile TiO2
arXiv:1108.1839 · doi:10.1063/1.3633217
Abstract
Electric field modulation analysis of thermopower (S) - carrier concentration (n) relation of a bilayer laminate structure composed of a 1.5-nm thick conducting layer, probably TinO2n-1 (n=2, 3,...) Magnéli phase, and rutile TiO2 was performed. The results clearly showed that both the rutile TiO2 and the thin interfacial layer contribute to carrier transport: the rutile TiO2 bulk region (mobility mu~0.03 cm2V-1s-1) and the 1.5-nm thick interfacial layer (mu~0.3 cm2V-1s-1). The effective thickness of the interfacial layer, which was obtained from the S-n relation, was below ~ 3 nm, which agrees well with that of the TEM observation (~1.5 nm), clearly showing that electric field modulation measurement of S-n relation can effectively clarify the carrier transport properties of a bilayer laminate structure.
21 pages, 4 figures
References in corpus (4)
- Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal
- Low temperature metallic state induced by electrostatic carrier doping of SrTiO
- Experimental characterization of the electronic structure of anatase TiO2: Thermopower modulation
- Electric field modulation of thermopower for transparent amorphous oxide thin film transistors