Electric field modulation of thermopower for transparent amorphous oxide thin film transistors

Abstract

To clarify the electronic density of states (DOS) around the conduction band bottom for state of the art transparent amorphous oxide semiconductors (TAOSs), InGaZnO4 and In2MgO4, we fabricated TAOS-based transparent thin film transistors (TTFTs) and measured their gate voltage dependence of thermopower (S). TAOS-based TTFTs exhibit an unusual S behavior. The |S|-value abruptly increases, but then gradually decreases as Vg increases, clearly suggesting the anti-parabolic shaped DOS is hybridized with the original parabolic shaped DOS around the conduction band bottom.

10 pages, 4 figures

References in corpus (1)

• Electric field modulation of thermopower for transparent amorphous oxide thin film transistors

Cited by in corpus (4)

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• Electric field thermopower modulation analysis of an interfacial conducting layer formed between Y2O3 and rutile TiO2