Experimental characterization of the electronic structure of anatase TiO2: Thermopower modulation
arXiv:1009.0400 · doi:10.1063/1.3507898
Abstract
Thermopower (S) for anatase TiO2 epitaxial films (n3D: 1E17-1E21 /cm3) and the gate voltage (Vg) dependence of S for thin film transistors (TFTs) based on TiO2 films were investigated to clarify the electronic density of states (DOS) around the conduction band bottom. The slope of the |S|-log n3D plots was -20 μV/K, which is an order magnitude smaller than that of semiconductors (-198 μV/K), and the |S| values for the TFTs increased with Vg in the low Vg region, suggesting that the extra tail states are hybridized with the original conduction band bottom.
11 pages, 4 figures