Sign-changing non-monotonic voltage gain of HfO2/Parylene-C/SrTiO3 field-effect transistor due to percolative insulator to two-dimensional metal transition

Abstract

Controlling the insulator-to-2D-metal transition is a promising key to overcome the scaling problem that silicon-based electronic devices will face in the near future. In this context, we examine the channel formation of SrTiO3-based solid-gated field-effect devices in which a 2D metal phase coexists with a semiconductor phase. A non-monotonic voltage-gain transfer characteristic with negative and positive slope regions is observed. We introduce a numerical model that helps to rationalize the experimental findings in terms of the established physics of field-effect transistors and percolation. Our numerical study not only reproduces the experimental results but also provides non-trivial predictions, which we verify experimentally.

References in corpus (12)

• Unveiling a two-dimensional electron gas with universal subbands at the surface of SrTiO3
• Creation and control of a two-dimensional electron liquid at the bare SrTiO3 surface
• Electrolyte gate-controlled Kondo effect in SrTiO3
• Nonlinear Hall effect and multichannel conduction in LaTiO3/SrTiO3 superlattices
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• Phase diagram of electrostatically doped Strontium Titanate (SrTiO3)
• Phase separation from electron confinement at oxide interfaces
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• Low-temperature dependence of the thermo-magnetic transport properties of the SrTiO3/LaAlO3 interface
• Thermally excited multi-band conduction in LaAlO3/SrTiO3 heterostructures exhibiting magnetic scattering
• Enhanced and continuous electrostatic carrier doping on the SrTiO${}_3$ surface

Cited by in corpus (1)

• Band offsets at amorphous-crystalline $A{l}_2{O}_3-SrTi{O}_3$ oxide interfaces