activity
20012026
most citedNonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: homogeneous/inhomogeneous transition of current distribution

254 citations · 674 across the 17 of their papers we have counts for

collaborators

17 papers

cond-mat.mtrl-sci2026

Optical poling of a quantum ferroelectric metal across the order-disorder phase transition

Mohamed Kandil, Yasuhide Tomioka, Yafei Ren +3

Electron-doped strontium titanate has emerged as a prototypical quantum ferroelectric metal. It provides a fertile ground to explore how ferroelectric instability intertwined with…

cond-mat.mtrl-sci2023★ 4 cited

Glass-like thermal conductivity and narrow insulating gap of EuTiO

Alexandre Jaoui, Shan Jiang, Xiaokang Li +8

Crystals and glasses differ by the amplitude and the temperature dependence of their thermal conductivity. However, there are crystals known to display glass-like thermal conductiv…

cond-mat.str-el2023★ 10 cited

Bandwidth Control and Symmetry Breaking in a Mott-Hubbard Correlated Metal

Lishai Shoham, Maria Baskin, Tom Tiwald +10

In Mott materials strong electron correlation yields a spectrum of complex electronic structures. Recent synthesis advancements open realistic opportunities for harnessing Mott phy…

cs.NE2022★ 38 cited

CMOS-based area-and-power-efficient neuron and synapse circuits for time-domain analog spiking neural networks

Xiangyu Chen, Zolboo Byambadorj, Takeaki Yajima +3

Conventional neural structures tend to communicate through analog quantities such as currents or voltages, however, as CMOS devices shrink and supply voltages decrease, the dynamic…

cond-mat.supr-con2022★ 23 cited

Superconductivity enhancement in polar metal regions of SrBaTiO and SrCaTiO revealed by the systematic Nb doping

Yasuhide Tomioka, Naoki Shirakawa, Isao H. Inoue

Two different ferroelectric materials, SrBaTiO and SrCaTiO, can be turned into polar metals with broken centrosymmetry via electron do…

cond-mat.str-el2017★ 2 cited

Sign-changing non-monotonic voltage gain of HfO2/Parylene-C/SrTiO3 field-effect transistor due to percolative insulator to two-dimensional metal transition

Alejandro Schulman, Ai Kitoh, Pablo Stoliar +1

Controlling the insulator-to-2D-metal transition is a promising key to overcome the scaling problem that silicon-based electronic devices will face in the near future. In this cont…