Enhanced and continuous electrostatic carrier doping on the SrTiO${}_3$ surface

Abstract

Paraelectrical tuning of a charge carrier density as high as 10${}^{13}$\,cm${}^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we introduce the Parylene-C/Ta${}_2$O${}_5$ hybrid gate insulator and fabricate FET devices on single-crystalline SrTiO${}_3$, which has been regarded as a bedrock material for oxide electronics. The gate insulator accumulates up to $\sim 10^{13}$cm${}^{-2}$ carriers, while the field-effect mobility is kept at 10\,cm${}^2$/Vs even at room temperature. Further to the exceptional performance of our devices, the enhanced compatibility of high carrier density and high mobility revealed the mechanism for the long standing puzzle of the distribution of electrostatically doped carriers on the surface of SrTiO${}_3$. Namely, the formation and continuous evolution of field domains and current filaments.

Supplementary Information: <http://www.nature.com/srep/2013/130424/srep01721/extref/srep01721-s1.pdf>

References in corpus (4)

• Granular Electronic Systems
• Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: homogeneous/inhomogeneous transition of current distribution
• Electrostatic charge accumulation versus electrochemical doping in SrTiO3 electric double layer transistors
• Low temperature metallic state induced by electrostatic carrier doping of SrTiO${}_3$

Cited by in corpus (3)

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• Sign-changing non-monotonic voltage gain of HfO2/Parylene-C/SrTiO3 field-effect transistor due to percolative insulator to two-dimensional metal transition
• A large modulation of electron-phonon coupling and an emergent superconducting dome in doped strong ferroelectrics