154 citations · 335 across the 9 of their papers we have counts for
9 papers
Relaxation of a Mott-neuron
Federico Tesler, Coline Adda, Julien Tranchant +5
We consider the phenomenon of electric Mott transition (EMT), which is an electric induced insulator to metal transition. Experimentally, it is observed that depending on the magni…
Sign-changing non-monotonic voltage gain of HfO2/Parylene-C/SrTiO3 field-effect transistor due to percolative insulator to two-dimensional metal transition
Alejandro Schulman, Ai Kitoh, Pablo Stoliar +1
Controlling the insulator-to-2D-metal transition is a promising key to overcome the scaling problem that silicon-based electronic devices will face in the near future. In this cont…
Resistive switching phenomena in TiOx nanoparticle layers for memory applications
Emanuelle Goren, Mariana Ungureanu, Raul Zazpe +5
Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conven…
Non thermal and purely electronic resistive transition in narrow gap Mott insulators
P. Stoliar, M. Rozenberg, E. Janod +3
Mott insulator to metal transitions under electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves non-trivial out…
Thermal effects and switching kinetics in silver/manganite memristive systems: Probing oxygen vacancies diffusion
P. Stoliar, M. J. Sánchez, G. A. Patterson +1
We investigate the switching kinetics of oxygen vacancies (Ov) diffusion in LPCMO-Ag memristive interfaces by performing experiments on the temperature dependence of the high resis…
Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit
P. Stoliar, P. Levy, M. J. Sánchez +7
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here w…
Universal electric-field-driven resistive transition in narrow-gap Mott insulators
Pablo Stoliar, Laurent Cario, Etienne Janod +6
One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the re…
Resistive switching induced by electronic avalanche breakdown in GaTaSeTe narrow gap Mott Insulators
Vincent Guiot, Laurent Cario, Etienne Janod +6
Mott transitions induced by strong electric fields are receiving a growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators,…
Asymmetric pulsing for reliable operation of titanium/manganite memristors
F. Gomez-Marlasca, N. Ghenzi, P. Stoliar +4
We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm t…