154 citations · 335 across the 9 of their papers we have counts for
4 papers · 1 filter
Relaxation of a Mott-neuron
Federico Tesler, Coline Adda, Julien Tranchant +5
We consider the phenomenon of electric Mott transition (EMT), which is an electric induced insulator to metal transition. Experimentally, it is observed that depending on the magni…
Resistive switching phenomena in TiOx nanoparticle layers for memory applications
Emanuelle Goren, Mariana Ungureanu, Raul Zazpe +5
Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conven…
Universal electric-field-driven resistive transition in narrow-gap Mott insulators
Pablo Stoliar, Laurent Cario, Etienne Janod +6
One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the re…
Asymmetric pulsing for reliable operation of titanium/manganite memristors
F. Gomez-Marlasca, N. Ghenzi, P. Stoliar +4
We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm t…