Relaxation of a Mott-neuron

Abstract

We consider the phenomenon of electric Mott transition (EMT), which is an electric induced insulator to metal transition. Experimentally, it is observed that depending on the magnitude of the electric excitation the final state may show a short lived or a long lived resistance change. We extend a previous model for the EMT to include the effect of local structural distortions through an elastic energy term. We find that by strong electric pulsing the induced metastable phase may become further stabilized by the electro-elastic effect. We present a systematic study of the model by numerical simulations and compare the results to new experiments in Mott insulators of the AM4Q8 family. Our work significantly extends the scope of our recently introduced leaky-integrate-and-fire Mott-neuron [P. Stoliar Adv Mat 2017] to bring new insight on the physical mechanism of its relaxation. This is a key feature for future neuromorphic circuit implementations.

References in corpus (8)

• Deep Learning in Neural Networks: An Overview
• Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging
• Nonequilibrium dynamical mean-field theory and its applications
• Universal electric-field-driven resistive transition in narrow-gap Mott insulators
• Resistive switching induced by electronic avalanche breakdown in GaTa${}_4$Se${}_{8-x}$Te${}_x$ narrow gap Mott Insulators
• Electric Pulse Induced Resistive Switching, Electronic Phase Separation, and Possible Superconductivity in a Mott insulator
• First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System GaTa4Se8
• Shock-waves and commutation speed of memristors

Cited by in corpus (5)

• Quantum materials for energy-efficient neuromorphic computing
• Direct observation of the electrically triggered Insulator-Metal transition in V3O5 far below the transition temperature
• Mott materials: unsuccessful metals with a bright future
• Mott resistive switching initiated by topological defects
• VO${}_2$ oscillator circuits optimized for ultrafast, 100 MHz-range operation