142 citations · 342 across the 4 of their papers we have counts for
5 papers
Electric-Field-Induced Resistive Switching in a Family of Mott Insulators : towards Non-Volatile Mott-RRAM Memories
Laurent Cario, Cristian Vaju, Benoit Corraze +2
The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical res…
Resistive switching induced by electronic avalanche breakdown in GaTaSeTe narrow gap Mott Insulators
Vincent Guiot, Laurent Cario, Etienne Janod +6
Mott transitions induced by strong electric fields are receiving a growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators,…
Temperature driven Vanadium clusterization and band gap enlargement in the layered misfit compound (LaS)VS
V. Ta Phuoc, V. Brouet, B. Corraze +2
Intriguing properties of the misfit layered chalcogenide (LaS)VS crystals were investigated by transport, optical measurements, angle-resolved photoemission (ARPES) a…
Electric Pulse Induced Resistive Switching, Electronic Phase Separation, and Possible Superconductivity in a Mott insulator
C. Vaju, L. Cario, B. Corraze +6
Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated w…
Magnetoelastic polarons in the hole-doped quasi-one dimensional model system Y2-xCaxBaNiO5
Francois-Xavier Lannuzel, Etienne Janod, Christophe Payen +3
Charge transport in the hole-doped quasi-1D model system YCaBaNiO (x 0.15) is investigated in the 50-300 K temperature range. The resistivity temperature dep…