First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System GaTa4Se8
arXiv:1409.4483 · doi:10.1103/PhysRevLett.113.086404
Abstract
The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of two states, one insulating and one metallic, that we toggle with a small bias current. We provide support for our findings by contrasting the experimental data with calculations that combine local density approximation with dynamical mean-field theory, which are in very good agreement.
arXiv comment5 pages and 4 figures. Supplemental material: 2 pages, 2 figures
References in corpus (18)
- Maximally-localized generalized Wannier functions for composite energy bands
- Wannier90: A Tool for Obtaining Maximally-Localised Wannier Functions
- Maximally localized Wannier functions: Theory and applications
- Electronic Structure Calculations with Dynamical Mean-Field Theory: A Spectral Density Functional Approach
- Continuous-time Monte Carlo methods for quantum impurity models
- Quantum Monte Carlo Impurity Solver for Cluster DMFT and Electronic Structure Calculations in Adjustable Base
- Wien2wannier: From linearized augmented plane waves to maximally localized Wannier functions
- Universality and Critical Behavior at the Mott transition
- Optical Conductivity in Mott-Hubbard Systems
- Mott-Hubbard Metal-Insulator Transition in Paramagnetic V_2O_3: a LDA+DMFT(QMC) Study
- Universal electric-field-driven resistive transition in narrow-gap Mott insulators
- Integer filling metal insulator transitions in the degenerate Hubbard model
- Electric-Field-Induced Resistive Switching in a Family of Mott Insulators : towards Non-Volatile Mott-RRAM Memories
- Resistive switching induced by electronic avalanche breakdown in GaTaSeTe narrow gap Mott Insulators
- Transition from Mott insulator to superconductor in GaNbSe and GaTaSe under high pressure
- Mott-Hubbard transition in V2O3 revisited
- Electric Pulse Induced Resistive Switching, Electronic Phase Separation, and Possible Superconductivity in a Mott insulator
- Localised Wannier orbital basis for the Mott insulators GaV4S8 and GaTa4Se8
Cited by in corpus (23)
- Ultrafast optical spectroscopy of strongly correlated materials and high-temperature superconductors: a non-equilibrium approach
- Challenges in materials and devices for Resistive-Switching-based Neuromorphic Computing
- Multiferroicity and skyrmions carrying electric polarization in GaV4S8
- Field-driven Mott gap collapse and resistive switch in correlated insulators
- Featureless adaptive optimization accelerates functional electronic materials design
- On the multiferroic skyrmion-host GaV4S8
- Unusual Ferroelectricity Induced by the Jahn-Teller Effect: A Case Study on Lacunar Spinel Compounds
- Direct experimental observation of the molecular Jeff=3/2 ground state in the lacunar spinel GaTa4Se8
- Direct observation of the electrically triggered Insulator-Metal transition in V3O5 far below the transition temperature
- Assessing exchange-correlation functional performance in the chalcogenide lacunar spinels GaMQ (M = Mo, V, Nb, Ta; Q = S, Se)
- Relaxation of a Mott-neuron
- Molecular Mott state in the deficient spinel GaVS
- Lattice dynamics and electronic excitations in a large family of lacunar spinels with a breathing pyrochlore lattice structure
- Structural, magnetic, electric, dielectric, and thermodynamic properties of multiferroic GeV4S8
- On the nature of the Mott transition in multiorbital systems
- Excitations and relaxation dynamics in multiferroic GeV4S8 studied by THz and dielectric spectroscopy
- Establishing magneto-structural relationships in the solid solutions of the skyrmion hosting family of materials: GaVSSe
- Charge density functional plus calculation of lacunar spinel GaMSe (M = Nb, Mo, Ta, and W)
- Crystal and Electronic Structure of GaTaSe From First-Principle Calculations
- Bond Ordering and Molecular Spin-Orbital Fluctuations in the Cluster Mott Insulator GaTaSe
- Novel =3/2 Metallic Phase and Unconventional Superconductivity in GaTaSe
- A Colossal Electroresistance response, accompanied by metal-insulator transition, in a mixed-valent vanadate
- Magnetic Order and Mott Transition on the Checkerboard Lattice