Assessing exchange-correlation functional performance in the chalcogenide lacunar spinels GaMQ (M = Mo, V, Nb, Ta; Q = S, Se)
arXiv:1905.09170 · doi:10.1103/PhysRevB.100.115149
Abstract
We perform systematic density functional theory (DFT) calculations to assess the performance of various exchange-correlation potentials in describing the chalcogenide GaMQ lacunar spinels (M=Mo, V, Nb, Ta; Q=S, Se). We examine the dependency of crystal structure (in cubic and rhombohedral symmetries), electronic structure, magnetism, optical conductivity, and lattice dynamics in lacunar spinels at four different levels of : the local density approximation (LDA), generalized gradient approximation (GGA), meta-GGA, and hybrid with fractional Fock exchange. We find that LDA significantly underperforms GGA and higher level functionals in predicting lattice constants. LDA also fails to properly describe the magnetism in the family, and for some compositions it does not find the ground state distorted crystal structure. The Perdew-Burke-Ernzerhof (PBE) and PBE revised for solids (PBEsol) GGA functionals perform reasonably well in predicting lattice constants as well as the electronic structures. We find that the GGA with an on-site Coulomb interaction (GGA) is unnecessary to produce a semiconducting state in the distorted polar phase. Plus Hubbard values ranging from 12 eV, however, improve the quantitative performance of the GGA functionals. The meta-GGA functional SCAN predicts reasonable lattice constants and electronic structures; it exhibits behavior similar to the GGA functionals for small values. The hybrid functional HSE06 is accurate in predicting the lattice constants, but leads to a band gap of 1 eV in the rhombohedral phase, which is higher than the experimental estimation of 0.2 eV. Our findings suggest that accurate qualitative and quantitative simulations of the lacunar spinel family with DFT requires careful attention to the nuances of the exchange-correlation functional and considered spin structures.
arXiv comment16 Pages, 13 Figures, 5 Tables
References in corpus (17)
- Assessing the Performance of Recent Density Functionals for Bulk Solids
- Multiferroicity and skyrmions carrying electric polarization in GaV4S8
- Screened hybrid functional applied to 3d^0-->3d^8 transition-metal perovskites LaMO3 (M=Sc-Cu): influence of the exchange mixing parameter on the structural, electronic and magnetic properties
- Electric-Field-Induced Resistive Switching in a Family of Mott Insulators : towards Non-Volatile Mott-RRAM Memories
- Transition from Mott insulator to superconductor in GaNbSe and GaTaSe under high pressure
- Skyrmion robustness in non-centrosymmetric magnets with axial symmetry: The role of anisotropy and tilted magnetic fields
- Magnetic Excitations in the Multiferroic Néel-type Skyrmion Host GaVS
- Spin-orbital Entangled Molecular States in Lacunar Spinel Compounds
- First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System GaTa4Se8
- Relativistic +BSE study of the optical properties of Ruddlesden-Popper iridates
- Characteristics of ferroelectric-ferroelastic domains in N{é}el-type skyrmion host GaVS
- Polar Dynamics at the Jahn-Teller Transition in Ferroelectric GaV4S8
- On the multiferroic skyrmion-host GaV4S8
- Direct experimental observation of the molecular Jeff=3/2 ground state in the lacunar spinel GaTa4Se8
- Magnetic phases of skyrmion-hosting GaVSSe () probed with muon spectroscopy
- Possible emergence of a skyrmion phase in ferroelectric GaMoS
- Optical conductivity in multiferroic GaVS and GeVS: Phonons and electronic transitions
Cited by in corpus (10)
- The Chemistry of Quantum Spin Liquids
- Magnetic Properties of NbSi2N4, VSi2N4, and VSi2P4 Monolayers
- Featureless adaptive optimization accelerates functional electronic materials design
- Lattice dynamics and electronic excitations in a large family of lacunar spinels with a breathing pyrochlore lattice structure
- Magnetic phase transitions and spin density distribution in the molecular multiferroic GaVS system
- Structural, magnetic and insulator-to-metal transitions under pressure in the GaV4S8 Mott insulator: A rich phase diagram up to 14.7 GPa
- Crystal and Electronic Structure of GaTaSe From First-Principle Calculations
- Strong tuning of magnetism and electronic structure by spin orientation
- Emerging Microelectronic Materials by Design: Navigating Combinatorial Design Space with Scarce and Dispersed Data
- Optical, dielectric, and magnetoelectric properties of ferroelectric and antiferroelectric lacunar spinels