Characteristics of ferroelectric-ferroelastic domains in N{é}el-type skyrmion host GaVS
arXiv:1702.07245 · doi:10.1038/srep44663
Abstract
GaVS is a multiferroic semiconductor hosting N{é}el-type magnetic skyrmions dressed with electric polarization. At T = 42K, the compound undergoes a structural phase transition of weakly first-order, from a non-centrosymmetric cubic phase at high temperatures to a polar rhombohedral structure at low temperatures. Below T, ferroelectric domains are formed with the electric polarization pointing along any of the four axes. Although in this material the size and the shape of the ferroelectric-ferroelastic domains may act as important limiting factors in the formation of the N{é}el-type skyrmion lattice emerging below T=13\:K, the characteristics of polar domains in GaVS have not been studied yet. Here, we report on the inspection of the local-scale ferroelectric domain distribution in rhombohedral GaVS using low-temperature piezoresponse force microscopy. We observed mechanically and electrically compatible lamellar domain patterns, where the lamellae are aligned parallel to the (100)-type planes with a typical spacing between 100 nm-1.2 m. We expect that the control of ferroelectric domain size in polar skyrmion hosts can be exploited for the spatial confinement and manupulation of N{é}el-type skyrmions.
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