142 citations · 342 across the 5 of their papers we have counts for
Showing 2013Show all
2 papers · 1 filter
cond-mat.mtrl-sci2013★ 142 cited
Electric-Field-Induced Resistive Switching in a Family of Mott Insulators : towards Non-Volatile Mott-RRAM Memories
Laurent Cario, Cristian Vaju, Benoit Corraze +2
The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical res…
cond-mat.str-el2013★ 125 cited
Resistive switching induced by electronic avalanche breakdown in GaTaSeTe narrow gap Mott Insulators
Vincent Guiot, Laurent Cario, Etienne Janod +6
Mott transitions induced by strong electric fields are receiving a growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators,…