154 citations · 335 across the 9 of their papers we have counts for
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Resistive switching phenomena in TiOx nanoparticle layers for memory applications
Emanuelle Goren, Mariana Ungureanu, Raul Zazpe +5
Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conven…
Non thermal and purely electronic resistive transition in narrow gap Mott insulators
P. Stoliar, M. Rozenberg, E. Janod +3
Mott insulator to metal transitions under electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves non-trivial out…
Thermal effects and switching kinetics in silver/manganite memristive systems: Probing oxygen vacancies diffusion
P. Stoliar, M. J. Sánchez, G. A. Patterson +1
We investigate the switching kinetics of oxygen vacancies (Ov) diffusion in LPCMO-Ag memristive interfaces by performing experiments on the temperature dependence of the high resis…