154 citations · 335 across the 9 of their papers we have counts for
3 papers · 1 filter
Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit
P. Stoliar, P. Levy, M. J. Sánchez +7
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here w…
Universal electric-field-driven resistive transition in narrow-gap Mott insulators
Pablo Stoliar, Laurent Cario, Etienne Janod +6
One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the re…
Resistive switching induced by electronic avalanche breakdown in GaTaSeTe narrow gap Mott Insulators
Vincent Guiot, Laurent Cario, Etienne Janod +6
Mott transitions induced by strong electric fields are receiving a growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators,…