24 citations · 64 across the 10 of their papers we have counts for
10 papers
Exploring Multifunctionality in MgO-Based Magnetic Tunnel Junctions with Coexisting Magnetoresistance and Memristive Properties
Alejandro Schulman, Elvira Paz, Tim Böhnert +2
Magnetic tunnel junctions (MTJs) and memristors are two key emerging nanotechnologies that attracted significant interest for potential applications at the forefront of the digital…
The impact of local pinning sites in magnetic tunnel junctions with non-homogeneous free layers
Alex. S. Jenkins, Leandro Martins, Luana Benetti +7
Pinning at local defects is a significant road block for the successful implementation of technological paradigms which rely on the dynamic properties of non-trivial magnetic textu…
Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics
Tahereh Sadat Parvini, Elvira Paz, Tim Böhnert +7
We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical c…
Multilayer spintronic neural networks with radio-frequency connections
Andrew Ross, Nathan Leroux, Arnaud de Riz +18
Spintronic nano-synapses and nano-neurons perform complex cognitive computations with high accuracy thanks to their rich, reproducible and controllable magnetization dynamics. Thes…
Classification of multi-frequency RF signals by extreme learning, using magnetic tunnel junctions as neurons and synapses
Nathan Leroux, Danijela Marković, Dédalo Sanz-Hernández +8
Extracting information from radiofrequency (RF) signals using artificial neural networks at low energy cost is a critical need for a wide range of applications from radars to healt…
Sign-changing non-monotonic voltage gain of HfO2/Parylene-C/SrTiO3 field-effect transistor due to percolative insulator to two-dimensional metal transition
Alejandro Schulman, Ai Kitoh, Pablo Stoliar +1
Controlling the insulator-to-2D-metal transition is a promising key to overcome the scaling problem that silicon-based electronic devices will face in the near future. In this cont…
Transport mechanism through metal-cobaltite interfaces
C. Acha, A. Schulman, M. Boudard +2
The resistive switching (RS) properties as a function of temperature were studied for Ag/LaSrCoO (LSCO) interfaces. The LSCO is a fully-relaxed 100 nm film grown by…
Poole-Frenkel effect and Variable-Range Hopping conduction in metal / YBCO resistive switching devices
Alejandro Schulman, Leandro F. Lanosa, Carlos Acha
Current-voltage (IV) characteristics and the temperature dependence of the contact resistance [] of Au / YBaCuO (optimally doped YBCO) interfaces have been st…
Cyclic electric field stress on bipolar resistive switching devices
Alejandro Schulman, Carlos Acha
We have studied the effects of accumulating cyclic electrical pulses of increasing amplitude on the non-volatile resistance state of interfaces made by sputtering a metal (Au, Pt)…
Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces
A. Schulman, C. Acha
In order to determine the key parameters that control the resistive switching mechanism in metal-complex oxides interfaces, we have studied the electrical properties of metal / YBa…