Transport mechanism through metal-cobaltite interfaces

Abstract

The resistive switching (RS) properties as a function of temperature were studied for Ag/La${}_{1-x}$Sr${}_x$CoO${}_3$ (LSCO) interfaces. The LSCO is a fully-relaxed 100 nm film grown by metal organic deposition on a LaAlO${}_3$ substrate. Both low and a high resistance states were set at room temperature and the temperature dependence of their current-voltage (IV) characteristics was mea- sured taking care to avoid a significant change of the resistance state. The obtained non-trivial IV curves of each state were well reproduced by a circuit model which includes a Poole-Frenkel element and two ohmic resistances. A microscopic description of the changes produced by the RS is given, which enables to envision a picture of the interface as an area where conductive and insulating phases are mixed, producing Maxwell-Wagner contributions to the dielectric properties.

arXiv comment13 pages, 5 figures, to be published in APL. Corresponding author: C. Acha ([email protected])

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