Large memcapacitance and memristance at Nb:SrTiO$_{3}$ / La$_{0.5}$Sr$_{0.5}$Mn$_{0.5}$Co$_{0.5}$O$_{3-δ}$ Topotactic Redox Interface

W. R. Acevedo; C. A. M. van den Bosch; M. H. Aguirre; C. Acha; A. Cavallaro; C. Ferreyra; M. J. Sánchez; L. Patrone; A. Aguadero; D. Rubi

doi:10.1063/1.5131854

paper

Large memcapacitance and memristance at Nb:SrTiO $_{3}$ / La $_{0.5}$ Sr $_{0.5}$ Mn $_{0.5}$ Co $_{0.5}$ O $_{3 - δ}$ Topotactic Redox Interface

arXiv:1905.05711 · doi:10.1063/1.5131854

Abstract

The possibility to develop neuromorphic computing devices able to mimic the extraordinary data processing capabilities of biological systems spurs the research on memristive systems. Memristors with additional functionalities such as robust memcapacitance can outperform standard devices in key aspects such as power consumption or miniaturization possibilities. In this work, we demonstrate a large memcapacitive response of a perovskite memristive interface, using the topotactic redox ability of La $_{0.5}$ Sr $_{0.5}$ Mn $_{0.5}$ Co $_{0.5}$ O $_{3 - δ}$ (LSMCO, 0 $\leq$ $δ$ $\leq$ 0.62). We demonstrate that the multi-mem behaviour originates at the switchable n-p diode formed at the Nb:SrTiO3/LSMCO interface. We found for our Nb:SrTiO $_{3}$ /LSMCO/Pt devices a memcapacitive effect C $_{H I G H}$ /C $_{L O W}$ ~ 100 at 150 kHz. The proof-of-concept interface reported here opens a promising venue to use topotactic redox materials for disruptive nanoelectronics, with straightforward applications in neuromorphic computing technology.

arXiv comment14 pages, 5 figures, to appear in Appl. Phys. Lett

Large memcapacitance and memristance at Nb:SrTiO $_{3}$ / La $_{0.5}$ Sr $_{0.5}$ Mn $_{0.5}$ Co $_{0.5}$ O $_{3 - δ}$ Topotactic Redox Interface

Abstract

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Large memcapacitance and memristance at Nb:SrTiO3​ / La0.5​Sr0.5​Mn0.5​Co0.5​O3−δ​ Topotactic Redox Interface

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Large memcapacitance and memristance at Nb:SrTiO $_{3}$ / La $_{0.5}$ Sr $_{0.5}$ Mn $_{0.5}$ Co $_{0.5}$ O $_{3 - δ}$ Topotactic Redox Interface