activity
20042020
most citedElectronic mechanism of ion expulsion under UV nanosecond laser excitation of silicon: Experiment and modeling

25 citations · 74 across the 5 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2020★ 19 cited

Growth and organization of (3-Trimethoxysilylpropyl) diethylenetriamine within reactive amino-terminated self-assembled monolayer on silica

Yannick Dufil, Virginie Gadenne, Pascal Carrière +2

Alkane chains are the most commonly used molecules for monolayer fabrication. Long chains are used for their strong van der Waals interactions inducing good layer organization. Ami…

cond-mat.mes-hall2019

Forming Weakly Interacting Multi Layers of Graphene by using Atomic Force Microscope Tip Scanning and Evidence of Competition Between Inner and Outer Raman Scattering Processes Piloted by Structural Defects

C. Pardanaud, A. Merlen, K Gratzer +8

We report on an alternative route based on nanomechanical folding induced by AFM tip to obtain weakly interacting multi-layer graphene (wi-MLG) from a chemical vapor deposition (CV…

physics.app-ph2019★ 10 cited

Large memcapacitance and memristance at Nb:SrTiO / LaSrMnCoO Topotactic Redox Interface

W. R. Acevedo, C. A. M. van den Bosch, M. H. Aguirre +7

The possibility to develop neuromorphic computing devices able to mimic the extraordinary data processing capabilities of biological systems spurs the research on memristive system…

cond-mat.mes-hall2015★ 20 cited

Influence of Molecular Organization on the Electrical Characteristics of π-conjugated Self-assembled Monolayers

Xavier Lefevre, Fabrice Moggia, Olivier Segut +10

Two new thiol compounds with σ-π-σ structure were synthesized and self-assembled on gold substrates. The morphology and the structural characterization of SAMs assessed by infrared…

cond-mat.mtrl-sci2007

Electrical Characterisation of Ultra-thin SAM Structures

C. Trapes, L. Rouai, L. Patrone

The way of reduction of metal oxyde semiconductor (MOS) structures is going to reach limitations and new devices have to be explored as an alternative to MOS technology. Molecular…

cond-mat.mtrl-sci2004★ 25 cited

Electronic mechanism of ion expulsion under UV nanosecond laser excitation of silicon: Experiment and modeling

Wladimir Marine, Nadezhda M. Bulgakova, Lionel Patrone +1

We present experimental and modeling studies of UV nanosecond pulsed laser desorption and ablation of (111) bulk silicon. The results involve a new approach to the analysis of plum…